Theoretical investigation of charge transfer between two defects in a wide band gap semiconductor
نویسندگان
چکیده
Charge traps in the semiconductor bulk (bulk charge traps) make it difficult to predict electric field within wide-bandgap semiconductors. The issue is daunting number of charge-trap candidates which means treatment generally qualitative or uses generalized models that do not consider trap's particular electronic structure. a nonetheless crucial quantity determining operation devices and performance solid-state single-photon emitters embedded devices. In this work we accurately compute average measured at location N$V^-$ charged defects for substitutional N (N$_\text{C}$) concentration $n_{\text{N}_\text{C}} \approx 1.41\times10^{18}$ cm$^{-3}$ commonly used oxygen-terminated diamond (see [D. A. Broadway $et$ $al$., Nature Electronics 1, 502 (2018)]). We achieve result by evaluating leading-order contribution far away from surface, comes N$_\text{C}$ induce ionization N$V^-$. Our results use density-functional theory (DFT) principle band bending. has potential aid both prediction functioning correction spectral diffusion often plagues optical frequencies upon repeated photoexcitation measurements. timescales involved thermally driven transfer also have investigations dynamics.
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ژورنال
عنوان ژورنال: Physical review
سال: 2023
ISSN: ['0556-2813', '1538-4497', '1089-490X']
DOI: https://doi.org/10.1103/physrevb.107.125305